PART |
Description |
Maker |
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
MIG100J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
APTGF90DA60T3AG |
Boost chopper NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
APTGF100A120TG |
Phase leg NPT IGBT Power Module 135 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGF90A60T1G |
110 A, 600 V, N-CHANNEL IGBT Phase leg NPT IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP Microsemi Corporation
|
APTGT50H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 80 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
APTGT200SK60TG |
Buck chopper Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT200H120G |
Full - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT200DH120G |
Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|